P24N65E     TO220 KILIF

SiHP24N65E www.vishay.com Vishay Siliconix S15-0291-Rev. G, 23-Feb-15 1 Document Number: 91475 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 E Series Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Q g • Low input capacitance (C iss ) • Reduced switching and conduction losses • Ultra low gate charge (Q g ) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverter

ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP24N65E-E3 Lead (Pb)-free and Halogen-free SiHP24N65E-GE3 ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 650 V Gate-Source Voltage V GS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C I D 24 ATC = 100 °C 16 Pulsed Drain Current a IDM 70 Linear Derating Factor 2 W/°C Single Pulse Avalanche Energy b E AS 508 mJ Maximum Power Dissipation P D 250 W Operating Junction and Storage Temperature Range TJ , T stg -55 to +150 °C Drain-Source Voltage Slope T J = 125 °C dV/dt 37 V/ns Reverse Diode dV/dt d 11 Soldering Recommendations (Peak Temperature) c for 10 s 300 °